Infineon IAUT300N10S5N015: A High-Performance 100V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, power density, and reliability are paramount. The Infineon IAUT300N10S5N015 stands as a premier solution, engineered to meet these demanding requirements. This 100V N-channel power MOSFET is a distinguished member of Infineon's groundbreaking OptiMOS™ 5 technology platform, setting a new benchmark for performance in a wide array of applications, from server and telecom power supplies to industrial motor drives and battery management systems.

The core strength of the IAUT300N10S5N015 lies in its exceptional ultra-low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance of just 1.5 mΩ, this device minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This is complemented by its outstanding switching performance, facilitated by low gate and output charges. The result is significantly reduced switching losses, which is critical for operating at higher frequencies. This enables designers to shrink the size of magnetic components and heat sinks, ultimately achieving a higher power density in their end systems.

Beyond raw electrical performance, the IAUT300N10S5N015 is designed for robustness and real-world application challenges. It features a high body-diode ruggedness and an avalanche rated design, ensuring operational stability and longevity even under harsh conditions, such as inductive switching and overvoltage events. The utilization of a TOLL (TO-Leadless) package offers the best of both worlds: the superior thermal performance of a top-side cooled package and a very compact footprint. This package technology enhances power dissipation capabilities, further supporting high-current operation in space-constrained designs.

ICGOOODFIND: The Infineon IAUT300N10S5N015 exemplifies the pinnacle of power MOSFET design, offering a potent combination of ultra-low losses, superior switching speed, and robust packaging. It is an optimal choice for engineers aiming to push the boundaries of efficiency and power density in modern power conversion systems.

Keywords: OptiMOS™ 5, Ultra-low R DS(on), High Switching Performance, TOLL Package, Power Density.