Kioxia has postponed mass production of its tenth‑generation BiCS10 3D NAND flash from 2026 to 2027. The new flagship technology features a 332‑layer stack , increasing layer count by 52% and bit density by 59% compared to BiCS8 (218 layers).

BiCS10 adopts Toggle DDR 6.0 interface, raising I/O speed from 3.6Gbps to 4.8Gbps (+33%). Power efficiency improves: input power down 10%, output power down 34%. In standard TLC mode, single‑die capacity reaches 2Tb , targeting AI servers, data centers, and high‑end consumer devices.

The design continues and upgrades CBA (CMOS directly Bonded to Array) technology, fabricating logic and memory array on separate wafers before bonding. This approach balances density, reliability, yield, and cost.

Kioxia has made BiCS10 commercialization a core FY2026 (April 2026 – March 2027) priority, with capex focused on both BiCS8 capacity expansion and BiCS10 R&D/line construction.

ICgoodFind: Kioxia’s BiCS10 delay pairs with a meaningful density and efficiency jump – a strong move to defend its high‑end NAND position.