Infineon BC848BE6327: Technical Datasheet, Application Circuit Design, and Sourcing Guidelines
The Infineon BC848BE6327 is a versatile and widely used NPN bipolar junction transistor (BJT) packaged in the compact SOT-23 form factor. As a general-purpose amplifier and switching device, it is a fundamental component in countless electronic designs, from consumer electronics to industrial control systems. This article provides a detailed overview of its technical specifications, practical application circuit design, and essential sourcing considerations.
Technical Datasheet Overview
The BC848BE6327 is part of a family of transistors distinguished by their current gain grouping (the 'BE' suffix). Key absolute maximum ratings and electrical characteristics from its datasheet include:
Collector-Emitter Voltage (VCE): 30 V. This defines the maximum voltage that can be applied between the collector and emitter when the base is open.
Collector Current (IC): 100 mA. The maximum continuous current that can flow through the collector.
Total Power Dissipation (Ptot): 250 mW (at Tamb = 25°C). The maximum power the device can dissipate without exceeding its junction temperature.
DC Current Gain (hFE): Classified into ranges. The 'BE' variant typically offers a gain between 180 - 460 at IC = 2 mA and VCE = 5 V, making it suitable for applications requiring high amplification.
Noise Figure: Typically 2 dB, which is excellent for small-signal amplification in audio and RF stages.
These parameters make it ideal for low-power amplification, switching loads under 100mA, and as a driver for larger transistors or components.
Application Circuit Design
Two primary use cases for the BC848BE6327 are amplification and switching.
1. Common-Emitter Amplifier:
This classic circuit configuration is used for voltage amplification. Key design considerations include:
Biasing: Resistors R1 and R2 form a voltage divider to set a stable DC operating point (quiescent point) on the base.
Gain: The voltage gain is approximately calculated by AV ≈ -RC / RE, where RC is the collector resistor and RE is the emitter resistor. A bypass capacitor (CE) across RE is often used to maximize AC gain.
Input/Output Coupling: Capacitors C1 and C2 block DC voltage, allowing only the AC signal to pass through the stages.
2. Low-Side Switch:
Using the transistor as a switch is one of its most common applications. In this configuration:
The transistor controls a load (e.g., an LED, relay coil, or motor) by switching it to ground.
A current-limiting resistor (RB) is critical to protect the base-emitter junction. The base current (IB) should be calculated to drive the transistor firmly into saturation (IB > IC / hFE), minimizing the voltage drop between collector and emitter (VCE(sat)).
A flyback diode is essential when driving inductive loads like relays to protect the transistor from voltage spikes generated when the current is suddenly interrupted.
Sourcing Guidelines
While a common component, careful sourcing ensures reliability and performance.
Authorized Distributors: Always prioritize sourcing from Infineon-authorized distributors to guarantee authenticity and avoid counterfeit parts.
Alternate Source Consideration: The BC848BE6327 is often second-sourced by other major manufacturers (e.g., Nexperia, ON Semiconductor, Diodes Incorporated). Verify cross-reference documentation to ensure pin-to-pin compatibility and equivalent specifications.
Packaging: It is available in tape and reel packaging for automated assembly (e.g., 3000 units per reel) or in cut tape/loose quantities for prototyping.
Lifecycle Status: Check that the part is not listed for end-of-life (EOL) or not recommended for new designs (NRND). The BC848BE6327 is typically classified as active and mass-produced.
In summary, the Infineon BC848BE6327 is a highly reliable and efficient general-purpose NPN transistor. ICGOODFIND recommends this component for its excellent amplification capabilities, robust switching performance, and wide availability. Engineers can confidently integrate it into a vast array of designs, from audio pre-amplifiers to digital logic interfaces, ensuring stable operation and cost-effectiveness.
Keywords: NPN Transistor, SOT-23, Small-Signal Amplification, Low-Power Switching, Current Gain (hFE)
