Intel JS28F128J3C120: A Comprehensive Technical Overview of the 128-Megabit StrataFlash® Embedded Memory
The Intel JS28F128J3C120 represents a significant component within the landscape of non-volatile memory solutions, designed for demanding embedded systems applications. As a member of the StrataFlash® family, this 128-megabit device integrates advanced architecture to deliver reliable storage, combining high density with a cost-effective single-transistor cell design.
Built on a 0.13-micron process technology, this memory chip offers a organized as 16 Megabytes x 8 or 8 Megabytes x 16, providing design flexibility for both byte-wide and word-wide systems. A key feature of this device is its dual-bank architecture, which allows simultaneous read and write operations. This means one bank can be reading data while the other is being programmed or erased, drastically improving overall system throughput and eliminating wait states for the microcontroller.
Operating from a single 1.8V power supply (VCC) for all functions—read, program, and erase—the JS28F128J3C120 is ideal for power-sensitive applications. It also features a versatile 2.7V to 3.6V VPP supply dedicated to accelerating write and erase operations, offering a balance between performance and power efficiency. The device supports a standard asynchronous memory interface, making it easy to interface with a wide range of processors and microcontrollers without complex timing controllers.
Performance is a critical hallmark. The chip boasts fast 70ns initial access time for reads. For write operations, it achieves a 4KB uniform block erase time of 0.6s (typical) and a 32-word program time of 6µs (typical). These specifications ensure efficient firmware updates and data storage. Furthermore, it incorporates an Advanced Sector Protection mechanism, offering both hardware and software methods to lock critical memory blocks to prevent accidental or malicious corruption.
Endurance and data retention are paramount for embedded systems. The JS28F128J3C120 is specified for a minimum of 100,000 program/erase cycles per block and guarantees data retention for up to 20 years, ensuring long-term reliability and integrity of stored code and data. It is offered in a variety of package options, including industry-standard TSOP and BGA packages, catering to different space and mounting constraints.
ICGOOODFIND: The Intel JS28F128J3C120 StrataFlash memory stands out as a high-density, high-performance, and highly reliable solution for a vast array of embedded applications, from networking and telecommunications equipment to industrial automation and automotive systems, where robust non-volatile storage is essential.
Keywords: StrataFlash Memory, Non-Volatile Storage, Dual-Bank Architecture, Embedded Systems, Block Erase
