Infineon BSC093N15NS5ATMA1: A High-Performance 150V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. Addressing these critical demands, the Infineon BSC093N15NS5ATMA1 stands out as a premier 150V N-channel power MOSFET built on Infineon's advanced OptiMOS™ 5 technology. This device is engineered to deliver exceptional performance in a wide array of applications, from industrial motor drives and power supplies to solar inverters and telecom systems.

The cornerstone of this MOSFET's superiority is its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 9.3 mΩ at 10 V, it minimizes conduction losses, allowing for higher efficiency power conversion. This is complemented by an outstanding switching performance, facilitated by low gate charge (Q G) and reduced internal capacitances. The result is faster switching speeds, which are crucial for high-frequency operation, leading to the potential for smaller magnetic components and overall more compact system designs.

Thermal management is a critical challenge in power-dense applications. The BSC093N15NS5ATMA1 excels here as well, offering low thermal resistance and high maximum junction temperature (175°C). This robust thermal characteristic ensures the device can operate reliably under strenuous conditions, dissipating heat effectively and maintaining system stability. The package itself, a SuperSO8 (LFPAK) with a separable leadframe, contributes to this by providing superior cooling and high power density in a minimal footprint.

Furthermore, the MOSFET is designed with ruggedness and longevity in mind. It features a high avalanche ruggedness and is qualified according to the highest quality standards, ensuring dependable operation even in harsh electrical environments where voltage spikes may occur.

ICGOOODFIND: The Infineon BSC093N15NS5ATMA1 is a benchmark component in the 150V class, masterfully balancing ultra-low on-resistance, superior switching characteristics, and excellent thermal performance. It is an optimal choice for designers aiming to push the boundaries of efficiency and power density in their next-generation applications.

Keywords: OptiMOS™ 5, Low R DS(on), High Switching Performance, SuperSO8, Power Density.